1n5221c to 1n5267c document number 84613 rev. 1.0, 02-sep-04 vishay semiconductors www.vishay.com 1 94 9367 small signal zener diodes features ? silicon planar power zener diodes. standard zener voltage tolerance is 2 %. applications voltage stabilization mechanical data case: do-35 glass case weight: approx. 125 mg packaging codes/options: tap / 10 k per ammopack (52 mm tape), 30 k/box tr / 10 k per 13 " reel , 30 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation t l 75 c p v 500 mw z-current i z p v /v z ma junction temperature t j 200 c storage temperature range t stg - 65 to + 200 c parameter test condition symbol value unit junction ambient l = 9.5 mm (3/8 "), t l =constant r thja 300 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 200 ma v f 1.1 v
www.vishay.com 2 document number 84613 rev. 1.0, 02-sep-04 1n5221c to 1n5267c vishay semiconductors electrical characteristics 1n5221c...1n5267c partnumber nominal zener voltage 1) test current maximum dynamic impedance 1) maximum dynamic impedance ty p i c a l temperature of coeffizient maximum reverse leakage current @ i zt , v z i zt z zt @ i zt z zk @ i zk = 0.25 ma @ i zt i r v r v ma ? ? (%/k) a v 1n5221c 2.4 20 30 1200 -0.085 100 1 1n5222c 2.5 20 30 1250 -0.085 100 1 1n5223c 2.7 20 30 1300 -0.080 75 1 1n5224c 2.8 20 30 1400 -0.080 75 1 1n5225c 3 20 29 1600 -0.075 50 1 1n5226c 3.3 20 28 1600 -0.070 25 1 1n5227c 3.6 20 24 1700 -0.065 15 1 1n5228c 3.9 20 23 1900 -0.060 10 1 1n5229c 4.3 20 22 2000 +0.055 5 1 1n5230c 4.7 20 19 1900 +0.030 5 2 1n5231c 5.1 20 17 1600 +0.030 5 2 1n5232c 5.6 20 11 1600 +0.038 5 3 1n5233c 6 20 7 1600 +0.038 5 3.5 1n5234c 6.2 20 7 1000 +0.045 5 4 1n5235c 6.8 20 5 750 +0.050 3 5 1n5236c 7.5 20 6 500 +0.058 3 6 1n5237c 8.2 20 8 500 +0.062 3 6.5 1n5238c 8.7 20 8 600 +0.065 3 6.5 1n5239c 9.1 20 10 600 +0.068 3 7 1n5240c 10 20 17 600 +0.075 3 8 1n5241c 11 20 22 600 +0.076 2 8.4 1n5242c 12 20 30 600 +0.077 1 9.1 1n5243c 13 9.5 13 600 +0.079 0.5 9.9 1n5244c 14 9 15 600 +0.082 0.1 10 1n5245c 15 8.5 16 600 +0.082 0.1 11 1n5246c 16 7.8 17 600 +0.083 0.1 12 1n5247c 17 7.4 19 600 +0.084 0.1 13 1n5248c 18 7 21 600 +0.085 0.1 14 1n5249c 19 6.6 23 600 +0.086 0.1 14 1n5250c 20 6.2 25 600 +0.086 0.1 15 1n5251c 22 5.6 29 600 +0.087 0.1 17 1n5252c 24 5.2 33 600 +0.088 0.1 18 1n5253c 25 5 35 600 +0.089 0.1 19 1n5254c 27 4.6 41 600 +0.090 0.1 21 1n5255c 28 4.5 44 600 +0.091 0.1 21 1n5256c 30 4.2 49 600 +0.091 0.1 23 1n5257c 33 3.8 58 700 +0.092 0.1 25 1n5258c 36 3.4 70 700 +0.093 0.1 27 1n5259c 39 3.2 80 800 +0.094 0.1 30 1n5260c 43 3 93 900 +0.095 0.1 33 1n5261c 47 2.7 105 1000 +0.095 0.1 36 1n5262c 51 2.5 125 1100 +0.096 0.1 39 1n5263c 56 2.2 150 1300 +0.096 0.1 43 1n5264c 60 2.1 170 1400 +0.097 0.1 46
1n5221c to 1n5267c document number 84613 rev. 1.0, 02-sep-04 vishay semiconductors www.vishay.com 3 1) based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 k/w typical characteristics (tamb = 25 c unless otherwise specified) 1n5265c 62 2 185 1400 +0.097 0.1 47 1n5266c 68 1.8 230 1600 +0.097 0.1 52 1n5267c 75 1.7 270 1700 +0.098 0.1 56 partnumber nominal zener voltage 1) test current maximum dynamic impedance 1) maximum dynamic impedance ty p i c a l temperature of coeffizient maximum reverse leakage current @ i zt , v z i zt z zt @ i zt z zk @ i zk = 0.25 ma @ i zt i r v r v ma ? ? (%/k) a v figure 1. thermal resistance vs. lead length figure 2. typical change of working voltage under operating conditions at t amb =25c 95 961 1 0 5 10 15 0 100 200 300 400 500 20 r Ctherm.resist.junction/ ambient ( k/w) thja l C lead length ( mm ) ll t l =constant 0 5 10 15 20 1 10 100 1000 v Cvoltagechange( mv ) z v z C z-voltag e(v) 25 95 9598 i z =5ma t j =25c figure 3.tpicalchangeofworingvoltagevs.junction temperature figure 4.totalpowerdissipationvs.ambienttemperature C60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v C relative voltagechange ztn t j C junction temperature (c ) 240 95 9599 v ztn =v zt /v z (25c) tk vz =10 x 10 C4 /k 8x10 C4 /k C4 x 10 C4 /k 6x10 C4 /k 4x10 C4 /k 2x10 C4 /k C2 x 10 C4 /k 0 0 40 80 120 160 0 100 300 400 500 600 p Ctotal power dissipation ( mw) tot t amb C ambient t emperature(c ) 200 95 9602 200
www.vishay.com 4 document number 84613 rev. 1.0, 02-sep-04 1n5221c to 1n5267c vishay semiconductors figure 5. temperature coefficient of vz vs. z-voltage figure 6. diode capacitance vs. z-voltage figure 7. forward current vs. forward voltage 0102030 C5 0 5 10 15 tk Ctemperature coefficient of v ( 10 /k) vz v z C z-voltag e(v) 50 95 9600 40 z C4 i z =5ma 0 5 10 15 0 50 100 150 200 c C diode capacitance ( pf ) d v z C z-voltag e(v) 25 95 9601 20 t j =25c v r =2v 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i C forward current ( ma) f v f C forward voltag e(v) t j =25c figure 8.z-currentvs.z-voltage figure 9.z-currentvs.z-voltage figure 10.differentialz-resistancevs.z-voltage 04 81216 20 95 9604 0 20 40 60 80 100 i C z-current ( ma) z v z C z-voltag e(v) p tot =500mw t amb =25c 15 20 25 30 0 10 20 30 40 50 i C z-current ( ma) z v z C z-voltag e(v) 35 95 9607 p tot =500mw t amb =25c 0 5 10 15 20 1 10 100 1000 r C differential z-resistance ( ? ) z v z C z-voltag e(v) 25 95 9606 t j =25c i z =1ma 5ma 10ma
1n5221c to 1n5267c document number 84613 rev. 1.0, 02-sep-04 vishay semiconductors www.vishay.com 5 package dimensions in mm (inches) figure 11. thermal response 1 10 100 1000 z Cthermalresistance for pulsecond.(k/w ) thp t p C pulse length ( ms ) 95 9603 10 C1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax Ct amb i zm =(Cv z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) x cathode identification ? 2.0 (0.08) max. ? 0.55 (0.02) max. 3.9 (0.15) max. 26 (1.02) min. 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 26 (1.02) min. iso method e
www.vishay.com 6 document number 84613 rev. 1.0, 02-sep-04 1n5221c to 1n5267c vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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